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- Wahlbrink, T. (author)
Supercritical drying process for high aspect-ratio HSQ nano-structures
- Article/chapterEnglish2006
Publisher, publication year, extent ...
- Elsevier BV,2006
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:kth-50540
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-50540URI
- https://doi.org/10.1016/j.mee.2006.01.026DOI
Supplementary language notes
- Language:English
- Summary in:English
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- SwePubSwePub
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Notes
- QC 20120301
- Supercritical resist drying allows the fabrication of high aspect-ratio (AR) resist patterns. The potential of this drying technique to increase the maximum achievable AR and the resolution of the overall lithographic process is analyzed for hydrogen silsesquioxane (HSQ). The maximum achievable AR is doubled compared to conventional nitrogen blow drying. Furthermore, the resolution is improved significantly.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Nanoteknik hsv//swe
- ENGINEERING AND TECHNOLOGY Nano-technology hsv//eng
- supercritical resist drying
- HSQ
- high-resolution electron beam lithography
- aspect ratio
Added entries (persons, corporate bodies, meetings, titles ...)
- Kupper, D. (author)
- Georgiev, Y. M. (author)
- Bolten, J. (author)
- Moller, M. (author)
- Lemme, Max C.,1970-AMO GmbH, AMICA, Aachen, Germany(Swepub:kth)u1m2eozy (author)
- Kurz, H. (author)
- AMO GmbH, AMICA, Aachen, Germany (creator_code:org_t)
Related titles
- In:Microelectronic Engineering: Elsevier BV83:4-9, s. 1124-11270167-93171873-5568
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