Leakage current mechanisms in epitaxial Gd(2)O(3) high-k gate dielectrics

QC 20120209
We report on leakage current mechanisms in epitaxial gadolinium oxide (Gd(2)O(3)) high-k gate dielectrics suitable for low standby power logic applications. The investigated p-type metal-oxide-semi con doctor capacitors are gated with complementary-metal-oxide-semiconductor-compatible fully silicided nickel silicide electrodes. The Gd(2)O(3) thickness is 5.9 nm corresponding to a capacitance equivalent oxide thickness of 1.8 nm. Poole-Frenkel conduction is identified as the main leakage mechanism with the high-frequency permittivity describing the dielectric response on the carriers. A trap level of Phi(T) = 1.2 eV is extracted. The resulting band diagram strongly suggests hole conduction to be dominant over electron conduction.

TEKNIK OCH TEKNOLOGIER Nanoteknik hsv//swe
ENGINEERING AND TECHNOLOGY Nano-technology hsv//eng
Electrochemical electrodes; Epitaxial layers; Gadolinium compounds; Leakage currents; MOS devices; Silicides

Echtermeyer, T. J. (author)
Schmidt, M. (author)
Mollenhauer, T. (author)
Wahlbrink, T. (author)
Lemme, Max C.,1970-AMO GmbH, AMICA, Aachen, Germany(Swepub:kth)u1m2eozy (author)
Kurz, H. (author)
AMO GmbH, AMICA, Aachen, Germany (creator_code:org_t)

In:Electrochemical and solid-state letters: The Electrochemical Society11:3, s. G12-G141099-00621944-8775

By the author/editor: Gottlob, H. D. B ...; Echtermeyer, T. ...; Schmidt, M.; Mollenhauer, T.; Wahlbrink, T.; Lemme, Max C., 1 ...; show more...; Kurz, H.; show less...

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