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Gd silicate :
Gd silicate : A high-k dielectric compatible with high temperature annealing
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Gottlob, H. D. B. (author)
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Stefani, A. (author)
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Schmidt, M. (author)
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- Lemme, Max C., 1970- (author)
- AMO GmbH, AMICA, Aachen, Germany
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- Kurz, H. (author)
- Tyndall National Institute at National University of Ireland, Cork
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Mitrovic, I. Z. (author)
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- Werner, M. (author)
- University of Liverpool
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Davey, W. M. (author)
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- Hall, S. (author)
- University of Liverpool
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- Chalker, P. R. (author)
- University of Liverpool
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- Cherkaoui, K. (author)
- University of Liverpool
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Hurley, P. K. (author)
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- Piscator, Johan, 1977 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Engström, Olof, 1943 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Newcomb, S. B. (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Raeissi, Bahman, 1979 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- American Vacuum Society, 2009
- 2009
- English.
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In: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567 .- 2166-2754 .- 2166-2746. ; 27:1, s. 249-252
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The authors report on the investigation of amorphous Gd-based silicates as high-k dielectrics. Two different stacks of amorphous gadolinium oxide (Gd(2)O(3)) and silicon oxide (SiO(2)) on silicon substrates are compared after annealing at temperatures up to 1000 degrees C. Subsequently formed metal oxide semiconductor capacitors show a significant reduction in the capacitance equivalent thicknesses after annealing. Transmission electron microscopy, medium energy ion scattering, and x-ray diffraction analysis reveal distinct structural changes such as consumption of the SiO(2) layer and formation of amorphous Gd silicate. The controlled formation of Gd silicates in this work indicates a route toward high-k dielectrics compatible with conventional, gate first complementary metal-oxide semiconductor integration schemes.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Annan teknik -- Övrig annan teknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Other Engineering and Technologies -- Other Engineering and Technologies not elsewhere specified (hsv//eng)
Keyword
- Annealing; Capacitance; Charge coupled devices; Dielectric materials; Electric conductivity; Gadolinium; Gate dielectrics; Metal analysis; Metallic compounds; MOS devices; Ozone water treatment; Semiconducting silicon; Semiconducting silicon compounds; Semiconductor materials; Silica; Silicates; Silicon compounds; X ray diffraction analysis
Publication and Content Type
- ref (subject category)
- art (subject category)
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- By the author/editor
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Gottlob, H. D. B ...
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Stefani, A.
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Schmidt, M.
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Lemme, Max C., 1 ...
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Kurz, H.
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Mitrovic, I. Z.
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show more...
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Werner, M.
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Davey, W. M.
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Hall, S.
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Chalker, P. R.
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Cherkaoui, K.
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Hurley, P. K.
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Piscator, Johan, ...
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Engström, Olof, ...
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Newcomb, S. B.
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Raeissi, Bahman, ...
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show less...
- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Nano technology
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Other Engineerin ...
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and Other Engineerin ...
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Journal of Vacuu ...
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Royal Institute of Technology
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Chalmers University of Technology