Comparison of metal gate electrodes on MOCVD HfO2

• Metal gate electrodes of sputtered aluminum (At), titanium nitride (TiN) and nickel aluminum nitride (NiAlN) are investigated in this work. They are compared with respect to their compatibility with metal organic chemical vapor deposited (MOCVD) hafnium dioxide (HfO2) gate dielectrics. TiN, with a midgap work function of 4.65 eV on SiO2, exhibits promising characteristics as metal gate on HfO2. In addition, encouraging results are presented for the ternary metal NiAlN, whereas classic At electrodes are found unstable in conjunction with HfO2.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Publication and Content Type

ref (subject category)

art (subject category)