Processing and evaluation of metal gate/high-kappa/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-kappa dielectric

Abermann, S. (author)

Efavi, J. K. (author)

Sjoblom, G. (author)

Olsson, J. (author)

Bertagnolli, E. (author)

(creator_code:org_t)

Elsevier BV, 2007
2007
English.
In: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 84:5-8, s. 1635-1638

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

We evaluate various metal gate/high-K/Si capacitors by their resulting electrical characteristics. Therefore, we process MOS gate stacks incorporating aluminium (Al), nickel (Ni), titanium-nitride (TiN), and molybdenum (Mo) as the gate material, and metal organic chemical vapour deposited (MOCVD) ZrO2 and HfO2 as the gate dielectric, respectively. The influence of the processing sequence - especially of the thermal annealing treatment - on the electrical characteristics of the various gate stacks is being investigated. Whereas post metallization annealing in forming gas atmosphere improves capacitance-voltage behaviour (due to reduced interface-, and oxide charge density), current-voltage characteristics degrade due to a higher leakage current after thermal treatment at higher temperatures. The Flatband-voltage values for the TiN-, Mo-, and Ni-capacitors indicate mid-gap pinning of the metal gates, however, Ni seems to be thermally unstable on ZrO2, at least within the process scheme we applied.

By the author/editor: Abermann, S.; Efavi, J. K.; Sjoblom, G.; Lemme, Max C., 1 ...; Olsson, J.; Bertagnolli, E.

About the subject

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