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Approaches to CMOS ...
Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics
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Gottlob, H. D. B. (author)
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Echtermeyer, T. (author)
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Mollenhauer, T. (author)
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Schmidt, M. (author)
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Efavi, J. K. (author)
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Wahlbrink, T. (author)
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- Lemme, Max C., 1970- (author)
- AMO GmbH, AMICA, Aachen, Germany
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Kurz, H. (author)
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Endres, R. (author)
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Stefanov, Y. (author)
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Schwalke, U. (author)
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(creator_code:org_t)
- 2006
- 2006
- English.
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In: ESSDERC 2006. - 9781424403011 ; , s. 150-153
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- Two process concepts for integration of novel gate stacks with epitaxial high-K dielectrics and metal gate electrodes are presented. A "gate first" process based on a planar gate stack on ultra thin SOI material has been used for successful fabrication of MOSFETs with TiN/Gd2O3 gate stack. Furthermore MOSFETs with W/Gd2O3 gate stack have been fabricated with a replacement gate process. This is the first successful attempt to integrate crystalline high-K dielectrics into a "gentle" damascene metal gate process in order to reduce process induced oxide damages.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Publication and Content Type
- ref (subject category)
- kon (subject category)
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- By the author/editor
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Gottlob, H. D. B ...
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Echtermeyer, T.
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Mollenhauer, T.
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Schmidt, M.
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Efavi, J. K.
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Wahlbrink, T.
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show more...
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Lemme, Max C., 1 ...
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Kurz, H.
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Endres, R.
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Stefanov, Y.
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Schwalke, U.
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show less...
- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Nano technology
- Articles in the publication
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ESSDERC 2006
- By the university
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Royal Institute of Technology