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Extracting the rela...
Extracting the relative dielectric constant for "high-k layers" from CV measurements : Errors and error propagation
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Buiu, O. (author)
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Hall, S. (author)
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Engstrom, O. (author)
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Raeissi, B. (author)
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- Lemme, Max C., 1970- (author)
- AMO GmbH, AMICA, Aachen, Germany
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Hurley, P. K. (author)
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Cherkaoui, K. (author)
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(creator_code:org_t)
- Elsevier BV, 2007
- 2007
- English.
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In: Microelectronics and reliability. - : Elsevier BV. - 0026-2714 .- 1872-941X. ; 47:4-5, s. 678-681
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The paper pursues an investigation of the errors associated with the extraction of the dielectric constant (i.e., kappa value) from capacitance-voltage measurements on metal oxide semiconductor capacitors. The existence of a transition layer between the high-rc dielectric and the silicon substrate is a factor that affects - in general - the assessment of the electrical data, as well as the extraction of rc. A methodology which accounts for this transition layer and the errors related to other parameters involved in the k value extraction is presented; moreover, we apply this methodology to experimental CV results on HfO2/SiOx/Si structures produced in different conditions.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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