Extracting the relative dielectric constant for "high-k layers" from CV measurements: Errors and error propagation

Extracting the relative dielectric constant for "high-k layers" from CV measurements : Errors and error propagation

Buiu, O. (author)

Hall, S. (author)

Engstrom, O. (author)

Raeissi, B. (author)

Hurley, P. K. (author)

Cherkaoui, K. (author)

(creator_code:org_t)

Elsevier BV, 2007
2007
English.
In: Microelectronics and reliability. - : Elsevier BV. - 0026-2714 .- 1872-941X. ; 47:4-5, s. 678-681

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

The paper pursues an investigation of the errors associated with the extraction of the dielectric constant (i.e., kappa value) from capacitance-voltage measurements on metal oxide semiconductor capacitors. The existence of a transition layer between the high-rc dielectric and the silicon substrate is a factor that affects - in general - the assessment of the electrical data, as well as the extraction of rc. A methodology which accounts for this transition layer and the errors related to other parameters involved in the k value extraction is presented; moreover, we apply this methodology to experimental CV results on HfO2/SiOx/Si structures produced in different conditions.

By the author/editor: Buiu, O.; Hall, S.; Engstrom, O.; Raeissi, B.; Lemme, Max C., 1 ...; Hurley, P. K.; show more...; Cherkaoui, K.; show less...

About the subject

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