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Extracting the rela...
Extracting the relative dielectric constant for "high-k layers" from CV measurements : Errors and error propagation
- Article/chapterEnglish2007
Publisher, publication year, extent ...
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Elsevier BV,2007
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:kth-50556
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-50556URI
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https://doi.org/10.1016/j.microrel.2007.01.006DOI
Supplementary language notes
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Language:English
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Summary in:English
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Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20120306
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The paper pursues an investigation of the errors associated with the extraction of the dielectric constant (i.e., kappa value) from capacitance-voltage measurements on metal oxide semiconductor capacitors. The existence of a transition layer between the high-rc dielectric and the silicon substrate is a factor that affects - in general - the assessment of the electrical data, as well as the extraction of rc. A methodology which accounts for this transition layer and the errors related to other parameters involved in the k value extraction is presented; moreover, we apply this methodology to experimental CV results on HfO2/SiOx/Si structures produced in different conditions.
Subject headings and genre
Added entries (persons, corporate bodies, meetings, titles ...)
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Hall, S.
(author)
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Engstrom, O.
(author)
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Raeissi, B.
(author)
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Lemme, Max C.,1970-AMO GmbH, AMICA, Aachen, Germany(Swepub:kth)u1m2eozy
(author)
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Hurley, P. K.
(author)
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Cherkaoui, K.
(author)
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AMO GmbH, AMICA, Aachen, Germany
(creator_code:org_t)
Related titles
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In:Microelectronics and reliability: Elsevier BV47:4-5, s. 678-6810026-27141872-941X
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