Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors

Raeissi, Bahman, 1979 (author): Chalmers tekniska högskola,Chalmers University of Technology

Engström, Olof, 1943 (author): Chalmers tekniska högskola,Chalmers University of Technology

Cherkaoui, K. (author): Tyndall National Institute at National University of Ireland, Cork

Monaghan, S. (author): Tyndall National Institute at National University of Ireland, Cork

Hurley, P. K. (author): Tyndall National Institute at National University of Ireland, Cork

Gottlob, H. D. B. (author)

(creator_code:org_t)

American Vacuum Society, 2009
2009
English.
In: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567 .- 2166-2754 .- 2166-2746. ; 27:1, s. 352-355

Related links:: http://dx.doi.org/10...; show more...; https://urn.kb.se/re...; https://doi.org/10.1...; https://research.cha...; show less...

Abstract Subject headings

With the employment of ultrathin, high dielectric constant gate materials in advanced semiconductor technology, the conventional capacitance-voltage measurement technique exhibits a series of anomalies. In particular, a nonsaturating increase in the accumulation capacitance with reducing measurement frequency is frequently observed, which has not been adequately explained to our knowledge. In this article, the authors provide an explanation for this anomaly and hence set a criterion for the lower bound on measurement frequency. We then present a model which allows the easy extraction of the required parameters and apply it to an experimental set of data.

By the author/editor: Lu, Y.; Hall, S.; Tan, L. Z.; Mitrovic, I. Z.; Davey, W. M.; Raeissi, Bahman, ...; show more...; Engström, Olof, ...; Cherkaoui, K.; Monaghan, S.; Hurley, P. K.; Gottlob, H. D. B ...; Lemme, Max C., 1 ...; show less...

About the subject

By the university: Royal Institute of Technology; Chalmers University of Technology

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