Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors

QC 20120227
With the employment of ultrathin, high dielectric constant gate materials in advanced semiconductor technology, the conventional capacitance-voltage measurement technique exhibits a series of anomalies. In particular, a nonsaturating increase in the accumulation capacitance with reducing measurement frequency is frequently observed, which has not been adequately explained to our knowledge. In this article, the authors provide an explanation for this anomaly and hence set a criterion for the lower bound on measurement frequency. We then present a model which allows the easy extraction of the required parameters and apply it to an experimental set of data.

Hall, S.University of Liverpool (author)
Tan, L. Z.University of Liverpool (author)
Mitrovic, I. Z.University of Liverpool (author)
Davey, W. M.University of Liverpool (author)
Raeissi, Bahman,1979Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)raeissin (author)
Engström, Olof,1943Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)oleng (author)
Cherkaoui, K.Tyndall National Institute at National University of Ireland, Cork (author)
Monaghan, S.Tyndall National Institute at National University of Ireland, Cork (author)
Hurley, P. K.Tyndall National Institute at National University of Ireland, Cork (author)
Gottlob, H. D. B. (author)
Lemme, Max C.,1970-AMO GmbH, AMICA, Aachen, Germany(Swepub:kth)u1m2eozy (author)
University of LiverpoolChalmers tekniska högskola (creator_code:org_t)

In:Journal of Vacuum Science & Technology B: American Vacuum Society27:1, s. 352-3551071-10231520-85672166-27542166-2746

By the author/editor: Lu, Y.; Hall, S.; Tan, L. Z.; Mitrovic, I. Z.; Davey, W. M.; Raeissi, Bahman, ...; show more...; Engström, Olof, ...; Cherkaoui, K.; Monaghan, S.; Hurley, P. K.; Gottlob, H. D. B ...; Lemme, Max C., 1 ...; show less...

About the subject

By the university: Royal Institute of Technology; Chalmers University of Technology

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