Subthreshold characteristics of p-type triple-gate MOSFETs

• The fabrication and characterization of triple-gate p-type metal-oxide semiconductor field effect transistors (p-MOSFETs) on SOI material with multiple channels is described. To demonstrate the beneficial effects of the triple-gate structure on scaling, output and transfer characteristics of 70nm printed gate length p-MOSFETs with 22nm MESA width are presented. The geometrical influence of triple-gate MESA width on subthreshold behavior is investigated in short- and long channel devices. The temperature dependence of subthreshold characteristics is discussed.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Publication and Content Type

ref (subject category)

kon (subject category)