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Investigation of Ni...
Investigation of NiAlN as gate-material for submicron CMOS technology
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Efavi, J K (author)
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- Lemme, Max C., 1970- (author)
- AMO GmbH, AMICA, Aachen, Germany
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Mollenhauer, T (author)
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Wahlbrink, T (author)
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Bobek, T (author)
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Wang, D (author)
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Gottlob, H D B (author)
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Kurz, H (author)
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(creator_code:org_t)
- Elsevier BV, 2004
- 2004
- English.
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In: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 76:1-4, s. 354-359
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Nickel-Aluminium-Nitride (NiAlN) is investigated as gate material for submicron CMOS technology for the first time. The MAIN films have been reactively sputtered from a Ni0.5Al0.5 target in a mixture of argon and nitrogen gas. The influence of the reactive gas content and process temperatures on the work function is presented. Electrical properties are extracted from high and low frequency capacitance-voltage measurements (QSCV, HFCV). Resistivity measurements are shown for various process conditions. Interface properties are observed by transmission electron microscopy. Primarily results show NiAlN's suitability for use as gate material in a CMOS replacement gate technology. Fabrication of n-type metal-oxide-semiconductor field effect transistors with a MAIN gates activated at 900 degreesC is demonstrated.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Keyword
- NiAlN
- work function
- CV-curves
- MOSFET
- metal gate
Publication and Content Type
- ref (subject category)
- art (subject category)
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