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Fabrication of mono...
Fabrication of monolithic bidirectional switch (MBS) devices with MOS-controlled emitter structures
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Baus, M. (author)
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Szafranek, B. N. (author)
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Chmielus, St. (author)
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- Lemme, Max C., 1970- (author)
- AMO GmbH, AMICA, Aachen, Germany
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Hadam, B. (author)
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Spangenberg, B. (author)
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Sittig, R. (author)
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Kurz, H. (author)
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(creator_code:org_t)
- 2006
- 2006
- English.
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In: PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS. ; , s. 181-184
- Related links:
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https://urn.kb.se/re...
Abstract
Subject headings
Close
- A novel high-voltage power device, the Monolithic Bidirectional Switch (MBS) is investigated in this work. Planar MBS devices have been fabricated by a self-aligned fabrication process using local oxidation of silicon technique and self-aligned sificidation. Results obtained from electrical characterization are compared with numerical simulations. Using highly transparent universal contacts, bidirectional switching with an excellent on/off current ratio is demonstrated. On-current densities of 75 A/cm(2) at V(on) = 3 V have been achieved even in an exploratory device structure. Simulations further demonstrate the high potential of the MBS for future power electronic systems such as the matrix converter.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Keyword
- Computer simulation
- Electric currents
- Electric switches
- MOS capacitors
- Power electronics
- Silicon
Publication and Content Type
- ref (subject category)
- kon (subject category)
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