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Non-planar devices ...
Non-planar devices for nanoscale CMOS
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- Lemme, Max C., 1970- (author)
- AMO GmbH, AMICA, Aachen, Germany
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Gottlob, H. D. B. (author)
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Kurz, H. (author)
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(creator_code:org_t)
- Dordrecht : Springer Netherlands, 2007
- 2007
- English.
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In: Nanoscaled Semiconductor-on-Insulator Structures and Devices. - Dordrecht : Springer Netherlands. - 9781402063787 ; , s. 19-32
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- In this paper, various concepts of multi-gate transistors are discussed with regards to their technological feasibility and rnanufacturability. In addition, non-standard fabrication process modules for triplegate nanoscale MOSFETs and sub-10 nm nanowires are presented. Alternatives to costly extreme ultraviolet (EUV) lithography are proposed as well as a self-aligned nickel silicide module to reduce inherent parasitic access resistances.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Keyword
- SOI
- FinFET
- tri-gate
- triple gate
- nano-CMOS
- nanowire
Publication and Content Type
- ref (subject category)
- kon (subject category)
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