Nanostructured MnGa films on Si/SiO(2) with 20.5 kOe room temperature coercivity

• Nanostructured Mn(67)Ga(33) films exhibiting high room temperature coercivity (H(C) = 20.5 kOe) have been prepared by sputtering onto thermally oxidized Si substrates. Both the morphology and the coercivity of the films can be tuned by varying the growth parameters. The low deposition rate film, sputtered at a reduced power and working pressure, demonstrates a discontinuous island-like growth and the highest H(C). The large H(C) is linked to the presence of the high anisotropy DO(22) Mn(3)Ga phase and the single domain character of the exchange isolated, dipolar interacting, single crystal islands.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

MAGNETIC-PROPERTIES

FEPT

MICROSTRUCTURE

DEPENDENCE

magnetism

spintronics

MnGa

Publication and Content Type

ref (subject category)

art (subject category)