Highly strained InGaAs/GaAs multiple quantum-wells for laser applications in the 1200-1300-nm wavelength regime

• We report on metalorganic vapor-phase epitaxy growth optimization and properties of highly strained InGaAs/GaAs quantum-well (QW) structures with emission wavelength beyond 1200 nm. It is observed that a sufficiently high V/III ratio in combination with low growth temperature is critical for preserved layer integrity when increasing the strain. Multiple QWs with up to five wells are realized without any degradation in photoluminescence intensity or broad-area laser performance at an emission wavelength of 1240 nm with threshold current density below 70 A/cm(2) per well.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Keyword

surface-emitting lasers

misfit dislocations

growth

thickness

emission

Physics

Fysik

Publication and Content Type

ref (subject category)

art (subject category)