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- Sundgren, PetrusKTH,Mikroelektronik och Informationsteknik, IMIT (author)
Highly strained InGaAs/GaAs multiple quantum-wells for laser applications in the 1200-1300-nm wavelength regime
- Article/chapterEnglish2005
Publisher, publication year, extent ...
- AIP Publishing,2005
- printrdacarrier
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- LIBRIS-ID:oai:DiVA.org:kth-5282
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-5282URI
- https://doi.org/10.1063/1.2010615DOI
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- Language:English
- Summary in:English
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- Uppdaterad från submitted til published: 20101001. QC 20101001
- We report on metalorganic vapor-phase epitaxy growth optimization and properties of highly strained InGaAs/GaAs quantum-well (QW) structures with emission wavelength beyond 1200 nm. It is observed that a sufficiently high V/III ratio in combination with low growth temperature is critical for preserved layer integrity when increasing the strain. Multiple QWs with up to five wells are realized without any degradation in photoluminescence intensity or broad-area laser performance at an emission wavelength of 1240 nm with threshold current density below 70 A/cm(2) per well.
Subject headings and genre
- NATURVETENSKAP Fysik hsv//swe
- NATURAL SCIENCES Physical Sciences hsv//eng
- surface-emitting lasers
- misfit dislocations
- growth
- thickness
- emission
- Physics
- Fysik
Added entries (persons, corporate bodies, meetings, titles ...)
- Berggren, JesperKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u13fhsee (author)
- Goldman, Peter M.O.KTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u1mgkg8w (author)
- Hammar, MattiasKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u1jfzgcj (author)
- KTHMikroelektronik och Informationsteknik, IMIT (creator_code:org_t)
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- In:Applied Physics Letters: AIP Publishing87:7, s. 071104-0003-69511077-3118
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