1260 nm InGaAs vertical-cavity lasers

•  The fabrication and performance of highly strained double-quantum well InGaAs/GaAs vertical-cavity lasers with record-long emission wavelength of 1260 nm at room temperature is reported. Depending on device diameter, the minimum threshold current is in the low mA-regime while the maximum output power exceeds 1 mW. The devices work continuous-wave over a wide temperature range of at least 10-120degrees C.

Keyword

Continuous wave lasers; Electric currents; Integrated circuit layout; Laser tuning; Light emission; Metallorganic vapor phase epitaxy; Semiconducting indium gallium arsenide

TECHNOLOGY

TEKNIKVETENSKAP

Publication and Content Type

ref (subject category)

art (subject category)