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1.3 μm InGaAs verti...
1.3 μm InGaAs vertical-cavity surface-emitting lasers with mode filter for single mode operation
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- Marcks von Würtemberg, Rickard (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Sundgren, Petrus (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Berggren, Jesper (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Hammar, Mattias (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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Ghisoni, Marco (author)
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Ödling, Elsy (author)
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Oscarsson, Vilhelm (author)
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Malmquist, Jessica (author)
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(creator_code:org_t)
- AIP Publishing, 2004
- 2004
- English.
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85:21, s. 4851-4853
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- We report on the performance and analysis of 1.3 mum range InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with an integrated mode filter consisting of a patterned silicon layer on the top distributer Bragg reflector. In this way, 1 mW of single mode power is obtained from a device with a wavelength of 1265 nm and a threshold current of 2.6 mA at room temperature. An effective index model is used to extract the internal and external losses of the VCSEL structure and to predict the modal losses with and without mode filter, thereby providing a useful design tool for single mode VCSELs.
Keyword
- Lasers; Modal analysis; Silicon; Thermal effects; Wave filters
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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