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Low-frequency noise...
Low-frequency noise in SiGe channel pMOSFETs on ultra-thin body SOI with Ni-silicided source/drain
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- von Haartman, Martin (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Östling, Mikael (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Malm, Gunnar (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Hållstedt, Julius (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Seger, Johan (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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(creator_code:org_t)
- AIP, 2005
- 2005
- English.
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In: Noise and Fluctuations. - : AIP. ; , s. 307-310
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
Close
- Thelow-frequency noise in buried SiGe channel pMOSFETs fabricated on ultra-thinbody silicon-on-insulator (SOI) substrates is investigated. The total thickness ofthe Si/SiGe/Si body structure, which is fully depleted (FD), is20 nm. The low-frequency noise properties are compared with FDSOI pMOSFETs with a 20 nm Si body. The effectof the Ni-silicide used in the Source/Drain were also studied,especially the case of Schottky-Barrier (SB) MOSFETs when the Ni-silicideis formed at the edges of the channel.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- 1/f noise
- low-frequency noise
- SiGe
- silicon-on-insulator (SOI)
- fully depleted (FD)
- Schottky-Barrier (SB)
- MOSFETs
- Electronics
- Elektronik
Publication and Content Type
- ref (subject category)
- kon (subject category)
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