Changes in luminescence intensities and carrier dynamics induced by proton irradiation in In_xGa_1-xAs/GaAs quantum dots

Marcinkevičius, Saulius (author): KTH,Mikroelektronik och informationsteknik, IMIT

Leon, Rosa (author)

Čechavičius, Bronislovas (author)

Magness, B. (author)

Taylor, W. (author)

Lobo, C. (author)

(creator_code:org_t)

2002
2002
English.
In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 66:23, s. 235314-

Related links:: http://link.aps.org/...; show more...; https://urn.kb.se/re...; https://doi.org/10.1...; show less...

Abstract Subject headings

The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between InGaAs/GaAs quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional quantum confinement. Measurements were carried out in different quantum dot structures varying in dot surface density (4x10(8)-3x10(10) cm(-2)) and substrate orientation [(100) and (311)B]. Similar trends were observed for all quantum dot samples. A slight increase in photoluminescence emission intensity after low to intermediate proton doses is observed in InGaAs/GaAs (100) quantum dot structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.

NATURVETENSKAP -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)
NATURAL SCIENCES -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)

By the author/editor: Marcinkevičius, ...; Siegert, Jörg; Leon, Rosa; Čechavičius, Bro ...; Magness, B.; Taylor, W.; show more...; Lobo, C.; show less...

About the subject

NATURAL SCIENCES: NATURAL SCIENCES; and Physical Science ...; and Atom and Molecul ...

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