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Dislocation-induced...
Dislocation-induced spatial ordering of InAs quantum dots : Effects on optical properties
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Leon, Rosa (author)
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Chaparro, S. (author)
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Johnson, S.R. (author)
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Navarro, C. (author)
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Jin, X. (author)
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Zhang, Y.H. (author)
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- Siegert, Jörg (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Marcinkevicius, Saulius (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- AIP Publishing, 2002
- 2002
- English.
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 91:9, s. 5826-5830
- Related links:
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https://espace.libra...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Misfit dislocations were used to modify the surface morphology and to attain spatial ordering of quantum dots (QDs) by molecular beam epitaxy. Effects of anneal time and temperature on strain-relaxed InxGa1-xAs/GaAs layers and subsequent spatial ordering of InAs QDs were investigated. Photoluminescence (PL) and time-resolved PL was used to study the effects of increased QD positional ordering, increased QD uniformity, and their proximity to dislocation arrays on their optical properties. Narrower inhomogeneous PL broadening from the QDs ordered on dislocation arrays were observed, and differences in PL dynamics were found.
Subject headings
- NATURVETENSKAP -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)
Keyword
- MISFIT DISLOCATIONS
- ISLANDS
- SUPERLATTICES
- TRANSITIONS
- LASERS
- Optics
- Optik
Publication and Content Type
- ref (subject category)
- art (subject category)
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