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SHIFTING PHOTOLUMIN...
SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS
- Article/chapterEnglish1993
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LIBRIS-ID:oai:DiVA.org:kth-60832
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-60832URI
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https://doi.org/10.1103/PhysRevB.47.9418DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
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NR 20140805
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It is shown that Li diffusion of GaAs can give rise to semi-insulating samples with electrical resistivity as high as 10(7) OMEGAcm in undoped, n-type, and p-type starting materials. The optical properties of the compensated samples are correlated with the depletion of free carriers caused by the Li diffusion. The radiative recombination of the Li-compensated samples is dominated by emissions with excitation-dependent peak positions that shift to lower energies with increasing compensation. The photoluminescence properties are characteristic of fluctuations of the electrostatic potential in strongly doped, compensated crystals.
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YANG, BH
(author)
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LINNARSSON, MKTH,Skolan för informations- och kommunikationsteknik (ICT)(Swepub:kth)u1x6y4ru
(author)
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KTHSkolan för informations- och kommunikationsteknik (ICT)
(creator_code:org_t)
Related titles
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In:Physical Review B Condensed Matter47, s. 9418-94240163-18291095-3795
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