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Silicon hybrid plas...
Silicon hybrid plasmonic submicron-donut resonator with pure dielectric access waveguides
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- Dai, Daoxin (author)
- KTH,Zhejiang-KTH Joint Research Center of Photonics, JORCEP
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- Shi, Yaocheng (author)
- KTH,Zhejiang-KTH Joint Research Center of Photonics, JORCEP
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- He, Sailing (author)
- KTH,Elektroteknisk teori och konstruktion,Zhejiang-KTH Joint Research Center of Photonics, JORCEP
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- Wosinski, Lech (author)
- KTH,Fotonik,Zhejiang-KTH Joint Research Center of Photonics, JORCEP
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- Thylen, Lars (author)
- KTH,Fotonik,Zhejiang-KTH Joint Research Center of Photonics, JORCEP
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(creator_code:org_t)
- 2011
- 2011
- English.
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In: Optics Express. - 1094-4087. ; 19:24, s. 23671-23682
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Characteristic analyses are given for a bent silicon hybrid plasmonic waveguide, which has the ability of submicron bending (e.g., R = 500nm) even when operating at the infrared wavelength range (1.2 mu m similar to 2 mu m). A silicon hybrid plasmonic submicron-donut resonator is then presented by utilizing the sharp-bending ability of the hybrid plasmonic waveguide. In order to enable long-distance optical interconnects, a pure dielectric access waveguide is introduced for the present hybrid plasmonic submicron-donut resonator by utilizing the evanescent coupling between this pure dielectric waveguide and the submicron hybrid plasmonic resonator. Since the hybrid plasmonic waveguide has a relatively low intrinsic loss, the theoretical intrinsic Q-value is up to 2000 even when the bending radius is reduced to 800nm. By using a three-dimensional finite-difference time-domain (FDTD) method, the spectral response of hybrid plasmonic submicron-donut resonators with a bending radius of 800nm is simulated. The critical coupling of the resonance at around 1423nm is achieved by choosing a 80nm-wide gap between the access waveguide and the resonator. The corresponding loaded Q-value of the submicron-donut resonator is about 220.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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