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Narrow luminescence linewidth of a silicon quantum dot

Sychugov, Ilya (author)
KTH,Mikroelektronik och Informationsteknik, IMIT
Juhasz, Robert (author)
KTH,Mikroelektronik och Informationsteknik, IMIT
Valenta, Jan (author)
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Linnros, Jan (author)
KTH,Mikroelektronik och Informationsteknik, IMIT
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 (creator_code:org_t)
American Physical Society, 2005
2005
English.
In: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 94:8, s. 087405 (1)-087405 (4)
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Single-dot luminescence spectroscopy was used to study the emission linewidth of individual silicon nanocrystals from low temperatures up to room temperature. The results show a continuous line narrowing towards lower temperatures with a linewidth as sharp as 2 meV at 35 K. This value, clearly below the thermal broadening at this temperature, proves the atomiclike emission from silicon quantum dots subject to quantum confinement. The low temperature measurements further reveal a similar to6 meV replica, whose origin is discussed. In addition, an similar to60 meV TO-phonon replica was detected, which is only present in a fraction of the dots.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Keyword

electron-phonon interactions
photoluminescence spectroscopy
semiconductor nanocrystals
porous silicon
confinement
Physics
Fysik

Publication and Content Type

ref (subject category)
art (subject category)

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Sychugov, Ilya
Juhasz, Robert
Valenta, Jan
Linnros, Jan
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NATURAL SCIENCES
NATURAL SCIENCES
and Physical Science ...
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Physical Review ...
By the university
Royal Institute of Technology

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