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Schottky-barrier he...
Schottky-barrier height tuning by means of ion implantation into preformed silicide films followed by drive-in anneal
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- Zhang, Zhen (author)
- KTH,Integrerade komponenter och kretsar
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- Qiu, Zhijun (author)
- KTH,Integrerade komponenter och kretsar
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- Liu, Ran (author)
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University
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- Östling, Mikael (author)
- KTH,Integrerade komponenter och kretsar
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- Zhang, Shi-Li (author)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- 2007
- 2007
- English.
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In: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 28:7, s. 565-568
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- An experimental study on Schottky-barrier height (SBH) tuning using ion implantation followed by drive-in anneal of As, B, In, and P in preformed NiSi and PtSi films is presented. Measured on B-implanted NiSi and PtSi Schottky diodes, the effective SBH on n-type Si is altered to similar to 1.0 eV. For As- and P-implanted diodes, the SBH on p-type Si can be tuned to around 0.9 eV The process window for the most pronounced SBH modification is dopant dependent.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- dopant segregation
- Schottky barrier (SB) lowering
- Schottky diode
- silicide
- Electronics
- Elektronik
Publication and Content Type
- ref (subject category)
- art (subject category)
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