1.3 ÎŒm strained InGaAs quantum well VCSELs : Operation characteristics and transverse modes analysis

• We report results on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs) for optical interconnection applications. The structure was grown by metalorganic vapour-phase epitaxy (MOVPE) and processed as top p-type DBR oxide-confined device. Our VCSELs exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm is demonstrated at room temperature. The thermal behaviour of our devices is explained through the threshold current-temperature characteristics. Furthermore, the effective index model is used to understand the modal behaviour.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Long-wavelength vertical cavity surface emitting laser

Optical interconnections

Strained inGaAs quantum well

Continuous wave lasers

Metallorganic vapor phase epitaxy

Optical devices

Optical interconnects

Oxides

Semiconducting gallium arsenide

Temperature control

Current-temperature characteristics

Metalorganic vapour-phase epitaxy (MOVPE)

Oxide-confined device

Quantum well lasers

Publication and Content Type

ref (subject category)

kon (subject category)