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  • Pougeoise, E. (author)

1.3 ÎŒm strained InGaAs quantum well VCSELs : Operation characteristics and transverse modes analysis

  • Article/chapterEnglish2006

Publisher, publication year, extent ...

  • San Jose, CA :SPIE,2006
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:kth-83003
  • https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-83003URI
  • https://doi.org/10.1117/12.646140DOI

Supplementary language notes

  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:kon swepub-publicationtype

Notes

  • QC 20120313
  • We report results on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs) for optical interconnection applications. The structure was grown by metalorganic vapour-phase epitaxy (MOVPE) and processed as top p-type DBR oxide-confined device. Our VCSELs exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm is demonstrated at room temperature. The thermal behaviour of our devices is explained through the threshold current-temperature characteristics. Furthermore, the effective index model is used to understand the modal behaviour.

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Gilet, Ph. (author)
  • Grosse, Ph. (author)
  • Poncet, S. (author)
  • Chelnokov, A. (author)
  • Gérard, J. -M (author)
  • Bourgcois, G. (author)
  • Stevens, R. (author)
  • Hamelin, R. (author)
  • Hammar, MattiasKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u1jfzgcj (author)
  • Berggren, JesperKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u13fhsee (author)
  • Sundgren, PetrusKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u1klj3sz (author)
  • KTHMikroelektronik och Informationsteknik, IMIT (creator_code:org_t)

Related titles

  • In:Vertical-Cavity Surface-Emitting Lasers XSan Jose, CA : SPIE, s. 13207-13207

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