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High-performance 1....
High-performance 1.2-ÎŒm Highly strained InGaAs/GaAs quantum well lasers
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Mogg, S. (author)
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Plaine, G. (author)
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Asplund, C. (author)
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Sundgren, P. (author)
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Baskar, K. (author)
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Mulot, M. (author)
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Schatz, R. (author)
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Hammar, M. (author)
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- Stockholm, 2002
- 2002
- English.
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In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - Stockholm. ; , s. 107-110
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https://urn.kb.se/re...
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Abstract
Subject headings
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- The growth and characterisation of high-performance 1.2-Όm highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145°C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Semiconducting indium gallium arsenide
- Semiconductor lasers
- Thermoanalysis
- Waveguides
- Ridge-waveguides (RWG)
- Quantum well lasers
Publication and Content Type
- ref (subject category)
- kon (subject category)
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