High-performance 1.2-ÎŒm Highly strained InGaAs/GaAs quantum well lasers

• The growth and characterisation of high-performance 1.2-ÎŒm highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145°C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Semiconducting indium gallium arsenide

Semiconductor lasers

Thermoanalysis

Waveguides

Ridge-waveguides (RWG)

Quantum well lasers

Publication and Content Type

ref (subject category)

kon (subject category)