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All-epitaxial singl...
Abstract
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- We have realised an all-epitaxial 1.55 Όm vertical cavity laser by employing a single wafer-fusion step. The laser structure is fabricated by fusing a 32-period p-doped (C) AlGaAs/GaAs top mirror onto a half-cavity structure consisting of a 50-period n-doped (Si) GaInAsP/InP bottom mirror and a 9 quantum well GaInAsP-active material. Laser mesas are fabricated using a wet etching procedure for the top mirror. The top mirror also contains an AlAs layer for oxidation for current confinement. The lasers operate pulsed at temperatures up to 40°C and at pulse lengths of 10 Όs up to 5°C. The minimum threshold current density at room temperature is 1.8 kA/cm2 for a device diameter of 55 Όm. Compared to nonoxidised laser diodes, the threshold current is markedly decreased in oxidised laser diodes. © 1999 Publication Board, Japanese Journal of Applied Physics.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Distributed bragg reflectors
- Long-wavelength lasers
- Vertical-cavity lasers
- Wafer fusion
- Etching
- Laser pulses
- Photocurrents
- Semiconducting gallium arsenide
- Semiconducting indium phosphide
- Semiconductor device structures
- Semiconductor quantum wells
- Distributed Bragg reflector
- Vertical cavity laser
- Semiconductor lasers
Publication and Content Type
- ref (subject category)
- art (subject category)
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