All-epitaxial single-fused 1.55 ÎŒm vertical cavity laser based on an InP bragg reflector

• We have realised an all-epitaxial 1.55 ÎŒm vertical cavity laser by employing a single wafer-fusion step. The laser structure is fabricated by fusing a 32-period p-doped (C) AlGaAs/GaAs top mirror onto a half-cavity structure consisting of a 50-period n-doped (Si) GaInAsP/InP bottom mirror and a 9 quantum well GaInAsP-active material. Laser mesas are fabricated using a wet etching procedure for the top mirror. The top mirror also contains an AlAs layer for oxidation for current confinement. The lasers operate pulsed at temperatures up to 40°C and at pulse lengths of 10 ÎŒs up to 5°C. The minimum threshold current density at room temperature is 1.8 kA/cm2 for a device diameter of 55 ÎŒm. Compared to nonoxidised laser diodes, the threshold current is markedly decreased in oxidised laser diodes. © 1999 Publication Board, Japanese Journal of Applied Physics.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Distributed bragg reflectors

Long-wavelength lasers

Vertical-cavity lasers

Wafer fusion

Etching

Laser pulses

Photocurrents

Semiconducting gallium arsenide

Semiconducting indium phosphide

Semiconductor device structures

Semiconductor quantum wells

Distributed Bragg reflector

Vertical cavity laser

Semiconductor lasers

Publication and Content Type

ref (subject category)

art (subject category)