Systematics of electrical conductivity across InP to GaAs wafer fused interfaces

• We report on the electrical and compositional characterization of wafer fused isotype heterojunctions between Zn, C or Si doped GaAs and Zn or Si doped InP. The junctions were characterized with current-voltage and secondary ion mass spectrometry (SIMS) measurements. It is demonstrated that very low-resistive junctions can be obtained in each case, but also that there is a strong influence from the detailed sample structure and processing conditions. SIMS was used to monitor the doping concentration across the interface as well as the impurity concentration of oxygen, carbon and iron.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Carbon

Crystal impurities

Electric conductivity

Interfaces (materials)

Iron

Oxygen

Secondary ion mass spectrometry

Semiconducting gallium arsenide

Semiconducting indium phosphide

Semiconductor device structures

Semiconductor doping

Silicon wafers

Low resistive junctions

Water fusion

Heterojunctions

Publication and Content Type

ref (subject category)

kon (subject category)