Topography dependent doping distribution in selectively regrown InP studied by scanning capacitance microscopy

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Hammar, M.KTH,Elektronik (author)

Topography dependent doping distribution in selectively regrown InP studied by scanning capacitance microscopy

Article/chapterEnglish1998

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AIP Publishing,1998
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LIBRIS-ID:oai:DiVA.org:kth-83025
https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-83025URI
https://doi.org/10.1063/1.120902DOI

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Language:English
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References: Lourdudoss, S., RodrÃguez Messmer, E., Kjebon, O., Landgren, G., (1995) J. Cryst. Growth, 152, p. 105; GÃ¶bel, R., Janning, H., Buckhard, H., (1997) Proceedings of the 9th International Conference on InP and Related Materials, p. 55. , Hyannis, MA, 11-15 May; Huang, Y., Williams, C.C., Wendman, M.A., (1996) J. Vac. Sci. Technol. a, 14, p. 1168; Kopanski, J.J., Marchiando, J.F., Lowney, J.R., (1996) J. Vac. Sci. Technol. B, 14, p. 242; Hammarlund, B., Lourdudoss, S., Kjebon, O., (1991) J. Electron. Mater., 20, p. 523; Shaw, D.W., (1979) J. Cryst. Growth, 47, p. 509; Kondo, M., Anayama, C., Okada, N., Sekiguchi, H., Domen, K., Tanahashi, T., (1994) J. Appl. Phys., 76, p. 914; Bath, R., Caneau, C., Zah, C.E., Koza, M.A., Bonner, W.A., Hwang, D.M., Schwarz, S.A., Favire, F.G., (1991) J. Cryst. Growth, 107, p. 772; Lourdudoss, S., Kjebon, O., (1997) IEEE J. Sel. Top. Quantum Electron., 3, p. 749; Also region 3 seems to be partly influenced by the adjacent undoped layer, but one may still distinguish a distinct level, appearing as a shoulder in the line profile of Fig. 3(b), clearly different from the level of region 5A comparison between Figs. 1 and 3 reveals that the triangular regions are slightly different in geometry. This is not specific for the involved dopants, but rather reflects a stochastic nature of the initial crystallographic evolution. Sometimes the triangles are defined by the two intersecting (111)B planes and the mesa wall, while in other cases the (001) substrate, or even an intermediate plane, serve as one boundaryErickson, A.N., Adderton, D.M., Strausser, Y.E., Tench, R.J., (1997) Solid State Technol., 40, p. 125. , See also; Lourdudoss, S., Kjebon, O., Nilsson, S., Nordell, N., Keller, C., (1994) Semi-Insulating III-V Materials, p. 255. , in edited by M. Godlewski World Scientific, Singapore NR 20140805
We have used scanning capacitance microscopy (SCM) to study the dopant distribution in regrown InP with high sensitivity and spatial resolution. Sulfur or iron doped InP was selectively regrown around n-doped InP mesas using hydride vapor phase epitaxy, and the resulting structure was imaged in cross section by SCM. For calibration purposes, reference layers with known doping levels were grown directly on top of the region of interest. Dramatic variations in the carrier concentration around the mesa, as well as pronounced differences in the behavior of S and Fe are observed. We correlate these findings to the growth and doping incorporation mechanisms. Â© 1998 American Institute of Physics.

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NATURVETENSKAP Fysik Den kondenserade materiens fysik hsv//swe
NATURAL SCIENCES Physical Sciences Condensed Matter Physics hsv//eng

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Rodriguez Messmer, E. (author)
Luzuy, M. (author)
Anand, S. (author)
Lourdudoss, S. (author)
Landgren, G. (author)
KTHElektronik (creator_code:org_t)

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In:Applied Physics Letters: AIP Publishing72:7, s. 815-8170003-69511077-3118

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