Cyclic growth of strain-relaxed islands

• Growth of Ge islands on Si(001) is observed in real time with high spatial resolution, using UHV transmission electron microscopy. We are able to monitor the formation of successive strain-relieving dislocations. The shape of the island oscillates as it grows, with each cycle corresponding to the introduction of one dislocation. Such growth cycles are shown to be a general feature of the growth of strain-relaxed islands, occurring even in equilibrium. © 1994 The American Physical Society.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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