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- GOTHELID, M (author)
SN-INDUCED SURFACE RECONSTRUCTIONS ON THE GE(111) SURFACE STUDIED WITH SCANNING TUNNELING MICROSCOPY
- Article/chapterEnglish1992
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- 1992
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- LIBRIS-ID:oai:DiVA.org:kth-84189
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-84189URI
- https://doi.org/10.1016/0039-6028(92)90890-IDOI
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- Language:English
- Summary in:English
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- NR 20140805
- Scanning tunneling microscopy (STM) has been used to study different Sn induced reconstructions on the Ge(111) surface; namely the (7 x 7), (5 x 5) and (square-root 3 x square-root 3)R30-degrees structures. The first two have been confirmed to be of the dimer adatom stacking fault (DAS) type with adatoms mainly being Sn. The (square-root 3 x square-root 3)R30-degrees superstructure was found at different Sn depositions. At 0.4 monolayer (ML) Sn coverage a homogeneous Sn adatom layer is adsorbed on the (1 x 1) surface in threefold sites directly over second-layer atoms (T4), while at low coverage, 0.1 ML, the top layer is a mixture of Sn and Ge atoms. We also propose the chemical identities of the different atoms seen in the STM images as related to their apparent height.
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- HAMMAR, M (author)
- TORNEVIK, C (author)
- KARLSSON, Ulf OKTH,Skolan för informations- och kommunikationsteknik (ICT),Materialfysik (author)
- NILSSON, NG (author)
- FLODSTROM, SA (author)
- KTHSkolan för informations- och kommunikationsteknik (ICT) (creator_code:org_t)
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- In:Surface Science271:3, s. L357-L3610039-60281879-2758
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