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Well-Known "Surface State" on Si(111)2×1 Identified as a Bulk Contribution
- Uhrberg, R I G (author)
- Hansson, G V (author)
-
- Karlsson, Ulf O (author)
- KTH,Skolan för informations- och kommunikationsteknik (ICT),Materialfysik
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- Nicholls, J M (author)
- Persson, P E S (author)
- Flodström, S Anders (author)
- Engelhardt, R (author)
- Koch, EE (author)
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- (creator_code:org_t)
- 1984
- 1984
- English.
- In: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 52:25, s. 2265-2268
- Journal article (peer-reviewed)
Abstract
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- Using polarization-dependent angle-resolved photoemission we show that two dominating structures in the photoemission spectra are due to direct transitions from the uppermost two valence bands in silicon. The final-state band for these transitions at photon energies 10.2-21.2 eV is found to have free-electron-like dispersion. Our results imply that that threefold-symmetry emission often assigned to back-bond surface states on Si(111)2×1 is really due to bulk photoemission.
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- Uhrberg, R I G
- Hansson, G V
- Karlsson, Ulf O
- Nicholls, J M
- Persson, P E S
- Flodström, S And ...
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- Engelhardt, R
- Koch, EE
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