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Role of surface sto...
Role of surface stoichiometry in the Cl-2/GaAs(001) reaction
- Article/chapterEnglish1996
Publisher, publication year, extent ...
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American Vacuum Society,1996
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:kth-84423
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-84423URI
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https://doi.org/10.1116/1.580342DOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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NR 20140805
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The room-temperature reaction of Cl-2 with GaAs(001)-4x6, -c(2x8), and -c(4x4) surfaces is studied with synchrotron soft x-ray photoelectron spectroscopy. The chemical composition of the reacted surfaces is found to depend on the stoichiometry of the starting surface. In all cases, the reaction occurs stepwise, with Ga and As monochlorides formed prior to the dichlorides. The Ga-rich surface is initially more reactive than either of the As-rich surfaces and it forms more GaCl than the As-rich surfaces, which instead form more AsCl. The sticking coefficient for chlorine on GaAs(001) decays exponentially with coverage. A contribution from Cl atoms comprising the surface dichlorides is identified in the Cl 2p core-level spectra. (C) 1996 American Vacuum Society.
Added entries (persons, corporate bodies, meetings, titles ...)
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Shuh, D K
(author)
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Hung, W H
(author)
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Hakansson, M C
(author)
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Kanski, J
(author)
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Karlsson, Ulf OKTH,Skolan för informations- och kommunikationsteknik (ICT),Materialfysik
(author)
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Yarmoff, J A
(author)
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KTHSkolan för informations- och kommunikationsteknik (ICT)
(creator_code:org_t)
Related titles
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In:Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films: American Vacuum Society14:3, s. 1815-18210734-21011520-8559
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