Iodine reaction and passivation of the Ge(111) surface

Gothelid, M (author)

LeLay, G (author)

Wigren, C (author)

Bjorkqvist, M (author)

Karlsson, Ulf O (author): KTH,Skolan för informations- och kommunikationsteknik (ICT),Materialfysik

(creator_code:org_t)

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

The Ge(111)-I surface has been studied at different I coverages ranging from 0.05 hit up to saturation, and different annealing temperatures, using photoelectron spectroscopy (PES) and scanning tunneling microscopy (STM). At saturation the surface is covered with I in the top site and Gel, species in the bridge site, coexisting with small islands/clusters comprising GeI2, giving a total coverage of I in GeIx species of 1.15 ML. The chemically induced shifts in the Ge 3d core level are 0.39 eV per attached I atom. The coverage determined from the I 4d core level is higher than 1.15 ML, which we explain by the presence of I not bound to Ge. Annealing at 200 degrees C decreases the iodine coverage, whereas the I 4d and Ge 3d line profiles are practically unchanged. Further heating desorbs the iodide species and restores the virgin c(2 x 8) structure.

By the author/editor: Gothelid, M; LeLay, G; Wigren, C; Bjorkqvist, M; Karlsson, Ulf O

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