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SURFACE-SHIFTED COR...
SURFACE-SHIFTED CORE LEVELS IN MO3SI (100) AND (110)
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JOHANSSON, LI (author)
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HAKANSSON, KL (author)
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WINCOTT, PL (author)
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- KARLSSON, Ulf O (author)
- KTH,Skolan för informations- och kommunikationsteknik (ICT),Materialfysik
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CHRISTENSEN, AN (author)
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(creator_code:org_t)
- 1991
- 1991
- English.
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In: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 43:15, s. 12355-12363
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- High-resolution photoemission studies of core levels in Mo3Si have been carried out using synchrotron radiation. Surface-shifted Si 2p components were observed on annealed (100) and (110) crystal faces and were unambiguously identified in adsorption experiments of hydrogen and oxygen. The surface core-level shifts were extracted using a curve-fitting procedure. For the (110) surface one shifted component was identified having a surface shift of -1.02(1) eV. For the (100) surface two shifted components were found to be necessary in order to model the experimental spectrum, the stronger component having a shift of -0.68(2) eV and the weaker a shift of -1.03(4) eV. No surface-shifted components could be identified in the Mo 4p photoelectron spectrum. Upon oxygen adsorption a chemically shifted Si 2p component was observed, indicating silicon oxidation, while no chemically shifted component appeared in the Mo 4p spectrum. In the Si 2p spectrum pronounced photoelectron-diffraction effects were observed both as a function of photoelectron kinetic energy and emission angle. These findings are presented and discussed.
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- ref (subject category)
- art (subject category)
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