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As overlayer on GaA...
As overlayer on GaAs(110) studied with photoemission
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He, Z Q (author)
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Khazmi, Y O (author)
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Kanski, J (author)
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Ilver, L (author)
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Nilsson, P O (author)
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- Karlsson, Ulf O (author)
- KTH,Skolan för informations- och kommunikationsteknik (ICT),Materialfysik
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(creator_code:org_t)
- 1995
- 1995
- English.
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In: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 52:23, s. 16602-16607
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- As-terminated GaAs(110) surfaces were prepared on ex situ cleaved substrates by molecular-beam epitaxy. The surface stoichiometry was controlled by postgrowth As deposition. Photoemission from a surface covered with a monolayer As was investigated in detail using synchrotron radiation. Two different surface components were found in core-level spectra, which are interpreted as due to adatoms bonding to the surface anions and cations. In the valence-band spectra several surface states were identified, in analogy with previous reports on the isoelectronic Sb/GaAs(110) system. The polarization dependence is not the same, however, which leads us to the conclusion that the adlayer bonding mechanisms are different in the two cases.
Publication and Content Type
- ref (subject category)
- art (subject category)
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