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ANOMALOUS QUENCHING OF PHOTOEMISSION FROM BULK STATES BY DEPOSITION OF CS ON INAS(100)
- OLSSON, LO (author)
- ILVER, L (author)
- KANSKI, J (author)
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- NILSSON, PO (author)
- KOWALSKI, BJ (author)
- HAKANSSON, MC (author)
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- (creator_code:org_t)
- 1995
- 1995
- English.
- In: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 52:3, s. 1470-1473
- Journal article (peer-reviewed)
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- The effect of angle-resolved valence-hand photoelectron spectra from adsorption of small amounts of Cs on InAs(100)4 X 2 has been studied. It is shown that a bulk interband transition is totally quenched at a coverage of Cs that leaves the 4 X 2 reconstruction practically intact. The surface order was monitored by low-energy electron diffraction and photoemission from surface states. A shift of the surface Fermi level to well above the conduction-band minimum is also observed. It is proposed that the resulting development of a two-dimensional electron gas at the surface affects the bulk states probed in photoemission.
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- OLSSON, LO
- ILVER, L
- KANSKI, J
- NILSSON, PO
- KOWALSKI, BJ
- HAKANSSON, MC
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- KARLSSON, Ulf O
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- Royal Institute of Technology
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