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ANOMALOUS QUENCHING...
ANOMALOUS QUENCHING OF PHOTOEMISSION FROM BULK STATES BY DEPOSITION OF CS ON INAS(100)
- Article/chapterEnglish1995
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LIBRIS-ID:oai:DiVA.org:kth-84710
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-84710URI
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https://doi.org/10.1103/PhysRevB.52.1470DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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NR 20140805
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The effect of angle-resolved valence-hand photoelectron spectra from adsorption of small amounts of Cs on InAs(100)4 X 2 has been studied. It is shown that a bulk interband transition is totally quenched at a coverage of Cs that leaves the 4 X 2 reconstruction practically intact. The surface order was monitored by low-energy electron diffraction and photoemission from surface states. A shift of the surface Fermi level to well above the conduction-band minimum is also observed. It is proposed that the resulting development of a two-dimensional electron gas at the surface affects the bulk states probed in photoemission.
Added entries (persons, corporate bodies, meetings, titles ...)
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ILVER, L
(author)
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KANSKI, J
(author)
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NILSSON, PO
(author)
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KOWALSKI, BJ
(author)
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HAKANSSON, MC
(author)
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KARLSSON, Ulf OKTH,Skolan för informations- och kommunikationsteknik (ICT),Materialfysik
(author)
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KTHSkolan för informations- och kommunikationsteknik (ICT)
(creator_code:org_t)
Related titles
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In:Physical Review B Condensed Matter52:3, s. 1470-14730163-18291095-3795
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