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ELECTRONIC-PROPERTI...
ELECTRONIC-PROPERTIES OF CLEAVED(110) AND MBE-GROWN(100) INAS SURFACES, CLEAN AND COVERED WITH AN ULTRA-THIN AG ADLAYER
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LELAY, G (author)
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ARISTOV, VY (author)
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KANSKI, J (author)
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NILSSON, PO (author)
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- KARLSSON, Ulf O (author)
- KTH,Skolan för informations- och kommunikationsteknik (ICT),Materialfysik
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HRICOVINI, K (author)
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BONNET, JE (author)
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(creator_code:org_t)
- 1993
- 1993
- English.
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In: Applied Surface Science. - 0169-4332 .- 1873-5584. ; 70-1, s. 502-506
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- The initial electronic structure of the pseudomorphic InAs/GaAs(100) heterostructure as well as that of the Ag/InAs(110) interface at 20 K have been studied by synchrotron radiation photoelectron spectroscopy. In the first case we find that the valence band spectra show no evidence for the formation of bulk-like energy bands. In the second case we prove for the first time that upon deposition of minute amounts of Ag at low temperature onto cleaved InAs(110) substrates one induces a giant movement of the Fermi level well into the conduction band thus creating a strong two-dimensional electron channel at the surface.
Publication and Content Type
- ref (subject category)
- art (subject category)
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