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High rate etching of SiC and SiCN in NF3 inductively coupled plasmas
- Wang, J. J. (author)
- Lambers, E. S. (author)
- Pearton, S. J. (author)
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- Grow, J. M. (author)
- Ren, F. (author)
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- (creator_code:org_t)
- 1998
- 1998
- English.
- In: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 42:5, s. 743-747
- Journal article (peer-reviewed)
Abstract
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- Etch rates of ∌3,500 Å/min for 6H-SiC and ∌7,500 Å/min for SiC0.5N0.5 were obtained in inductively coupled plasmas with NF3-based chemistries. Similar etch rate trends were achieved with both NF3/O2 and NF3/Ar mixtures. The rates were strong functions of plasma composition, ion energy and ion fluxes, and were independent of conductivity type for SiC. Surface root-mean-square (RMS) roughness were 1-2 nm for etched SiC over a wide range of conditions indicating equi-rate removal of the SiFx and CFx etch products, but SiCN surfaces became extremely rough (RMS roughness > 20 nm) for F2-rich plasma conditions. The etched surfaces of SiC were chemically clean and stoichiometric, with small (<0.2 at%) quantities of N2- or F2- containing residues detected. © 1998 Elsevier Science Ltd. All rights reserved.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Etching
- Fluorine compounds
- Plasma applications
- Semiconducting silicon compounds
- Silicon carbide
- Stoichiometry
- Surface roughness
- Inductively coupled plasmas (ICP)
- Surface root-mean-square (RMS) roughness
- Semiconductor device manufacture
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- ref (subject category)
- art (subject category)
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- Wang, J. J.
- Lambers, E. S.
- Pearton, S. J.
- Östling, Mikael
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- Grow, J. M.
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- Ren, F.
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