SiC MISFETs with MBE-grown AlN gate dielectric

• Metal-Insulator-Semiconductor Field Effect Transistors (MISFETs) with ion implanted source and drain junctions have been made in 6H silicon carbide (SiC). Aluminum nitride (AlN) was used as the insulating gate dielectric, and was grown using molecular beam epitaxy (MBE). Gate controlled transistor operation was shown with an inversion layer mobility of 10-20 cm2/Vs. However, due to relaxation of the AlN film, the gate leakage was excessive, which precluded a thorough investigation of the transistor characteristics. This paper describes the manufacturing process and current voltage characteristics, and an improved process sequence is also proposed.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Carrier mobility

Current voltage characteristics

Dielectric films

Ion implantation

Leakage currents

Molecular beam epitaxy

Relaxation processes

Semiconducting aluminum compounds

Semiconductor junctions

Silicon carbide

Substrates

Gate dielectrics

Inversion layer mobility

MISFET devices

Publication and Content Type

ref (subject category)

art (subject category)