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Comparison of F2 pl...
Comparison of F2 plasma chemistries for deep etching of SiC
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Lee, K. P. (author)
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Leerungnawarat, P. (author)
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Pearton, S. J. (author)
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Ren, F. (author)
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Chu, S. N. G. (author)
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- Zetterling, Carl-Mikael (author)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- Boston, MA, 2001
- 2001
- English.
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In: Materials Research Society Symposium - Proceedings. - Boston, MA. ; , s. H7.7.1-H7.7.6
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Abstract
Subject headings
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- A number of F2-based plasma chemistries (NF3, SF6, PF5 and BF3) were investigated for high rate etching of SiC. The most advantageous of these is SF6, based on the high rate (0.6 Όm·min-) it achieves and its relatively low cost compared to NF3. The changes in electrical properties of the near-surface region are relatively minor when the incident ion energy is kept below approximately 75 eV. At a process pressure of 5 m Torr, the SiC etch rate falls-off by ∌15% in 30 Όm diameter via holes compared to larger diameter holes (> 60 Όm diameter) or open areas on the mask.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Electric properties
- Fluorine compounds
- Inductively coupled plasma
- Ions
- Plasma etching
- Pressure effects
- Diameter holes
- Ion energy
- Plasma chemistry
- Silicon carbide
Publication and Content Type
- ref (subject category)
- kon (subject category)
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