Influence of trenching effect on the characteristics of buried-gate SiC junction field-effect transistors

• Two different structures of junction field-effect transistors in 4H-SiC, with and without trenching effect in the channel region, have been fabricated and characterized. The devices formed with metal mask show a trenching profile (>∌0.2 ÎŒm) after dry etch in the channel groove region and exhibited static induction transistor (SIT)-like characteristics in the sub-threshold region of I-V curves as the channel thickness decreases. The devices without trenching effect have been processed by using a wet-etched oxide mask resulting in a sloped dry-etch profile (Ξ=∌30°) in the channel, and consequently showed well-saturated drain characteristics for all the channel thicknesses. The conduction mechanisms in these JFETs are examined by the potential profiles from two dimensional numerical simulations.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Dry Etching

JFETs

SiC

Trenching Effect

Trenching effects

Computer simulation

Electric conductivity

Etching

Numerical analysis

Semiconductor junctions

Silicon carbide

Field effect transistors

Publication and Content Type

ref (subject category)

art (subject category)