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Investigation of th...
Investigation of thermal properties in fabricated 4H-SiC high-power bipolar transistors
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Danielsson, Erik (author)
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- Zetterling, Carl-Mikael (author)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (author)
- KTH,Integrerade komponenter och kretsar
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Forsberg, U. (author)
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Janzen, E. (author)
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(creator_code:org_t)
- Trans Tech Publications Inc. 2002
- 2002
- English.
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In: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 389-393:2, s. 1337-1340
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Abstract
Subject headings
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- Silicon Carbide bipolar junction transistors have been fabricated and investigated. The transistors had a maximmn current gain of approximately 10 times, and a breakdown voltage of up to 600 V. When operated at high power densities the device showed a clear self-heating effect, decreasing the current gain. The junction temperature was extracted during self-heating to approximately 150 °C, using the assumption that the current gain only depends on temperature. Thermal images of a device under operation were also recorded using an infrared camera, showing a significant temperature increase in the vicinity of the device. Physical device simulations have been used to analyze the measured data. The thermal conductivity is fitted to model the measured self-heating, and the lifetime in the base is fitted against the measurement of the current gain.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Bipolar Transistors
- Breakdown Voltage
- Thermal Conductivity
- Bipolar junction transistors
- Electric breakdown
- Electric currents
- Gain measurement
- Silicon carbide
Publication and Content Type
- ref (subject category)
- art (subject category)
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