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Simulation and Meas...
Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs
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Koo, S. -M (author)
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- Domeij, Martin (author)
- KTH,Integrerade komponenter och kretsar
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- Zetterling, Carl-Mikael (author)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (author)
- KTH,Integrerade komponenter och kretsar
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- Forsberg, Urban (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Janzén, Erik (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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(creator_code:org_t)
- Trans Tech Publications Inc. 2003
- 2003
- English.
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Series: Materials Science Forum ; 433-436
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In: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 433-436, s. 773-776
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Abstract
Subject headings
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- Buried-gate junction field-effect transistors (JFETs) have been fabricated in 4H polytype silicon carbide (SiC). The dynamic switching characteristics of the JFETs in a circuit with inductive load have been characterized. The drain voltage rise/fall time of ∌30 ns and 25 ns have been observed for turn-off and turn-on, respectively. The results have been compared to numerical mixed-mode circuit simulations with finite element structures.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Junction Field Effect Transistors
- Simulation
- Switching
- Inductive loads
- Electric potential
- Hydrogen
- Semiconductor materials
- Silicon carbide
- Junction gate field effect transistors
- TECHNOLOGY
Publication and Content Type
- ref (subject category)
- art (subject category)
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