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Challenges for High...
Challenges for High Temperature Silicon Carbide Electronics
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- Zetterling, Carl-Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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Koo, S. -M (författare)
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Danielsson, Erik (författare)
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Liu, W. (författare)
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Lee, S. -K (författare)
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- Domeij, Martin (författare)
- KTH,Integrerade komponenter och kretsar
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Lee, H. -S (författare)
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- Östling, Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- San Francisco, CA, 2003
- 2003
- Engelska.
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Ingår i: Materials Research Society Symposium - Proceedings. - San Francisco, CA. ; , s. 15-25
- Relaterad länk:
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http://www.scopus.co...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- Silicon carbide has been proposed as an excellent material for high-frequency, high-power and high-temperature electronics. High power and high frequency applications have been pursued for quite some time in SiC with a great deal of success in terms of demonstrated devices. However, self-heating problems due to the much higher power densities that result when ten times higher electrical fields are used inside the devices needs to be addressed. High-temperature electronics has not yet experienced as much attention and success, possibly because there is no immediate market. This paper will review some of the advances that have been made in high-temperature electronics using silicon carbide, starting from process technology, continuing with device design, and finishing with circuit examples. For process technology, one of the biggest obstacles is long-term stable contacts. Several device structures have been electrically characterized at high temperature (BJTs and FETs) and will be compared to surface temperature measurements and physical device simulation. Finally some proposed circuit topologies as well as novel solutions will be presented.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Computer simulation
- Energy gap
- High temperature effects
- Integrated circuit layout
- Interfaces (materials)
- Ohmic contacts
- Semiconductor doping
- Silicon carbide
- Thermodynamic stability
- Thermooxidation
- Mobile charges
- Power density
- Semiconductor device manufacture
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)