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pMOSFETs with recessed and selectively regrown Si1-xGex source/drain junctions
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- Isheden, Christian (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Hellström, Per-Erik (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- von Haartman, Martin (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- (creator_code:org_t)
- Elsevier BV, 2005
- 2005
- English.
- In: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001 .- 1873-4081. ; 8:1-3, s. 359-362
- Journal article (peer-reviewed)
Abstract
Subject headings
Close
- A new source/drain formation concept based on selective Si etching followed by selective regrowth of in situ B-doped Si(1-x)Ge(x)is presented. Both process steps are performed in the same reactor to preserve the gate oxide. Well-behaved transistors are demonstrated with a negligibly low gate-to-substrate leakage current.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- pMOS
- shallow junctions
- CVD
- Si1-xGex
- Electronics
- Elektronik
Publication and Content Type
- ref (subject category)
- art (subject category)
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